Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Essencore Limited KD48GU881-26N190A 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Essencore Limited KD48GU881-26N190A 8GB

Essencore Limited KD48GU881-26N190A 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Essencore Limited KD48GU881-26N190A 8GB

需要考虑的原因
Essencore Limited KD48GU881-26N190A 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 -23% 更低的延时
更快的读取速度，GB/s

15.2 13.9

测试中的平均数值
更快的写入速度，GB/s

11.2 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Essencore Limited KD48GU881-26N190A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 30
读取速度，GB/s

13.9 15.2
写入速度，GB/s

8.6 11.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 2917

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3600C18-16GTRG 16GB

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Mushkin 991679ES 996679ES 2GB

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Samsung M393B2G70BH0-CH9 16GB

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Crucial Technology CT16G4SFD8266.C16FJ 16GB

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Kingston 9965516-112.A00LF 16GB

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PNY Electronics PNY 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Apacer Technology 78.C1GMW.AZC0B 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240