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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905624-010.A00G 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Kingston 9905624-010.A00G 4GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Kingston 9905624-010.A00G 4GB 需要考虑的原因
Kingston 9905624-010.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905624-010.A00G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 27
  • 读取速度，GB/s
    13.9 left arrow 14.5
  • 写入速度，GB/s
    8.6 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2195

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Kingston 9905624-010.A00G 4GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905624-010.A00G 4GB
Kingston 9905624-010.A00G 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK128GX4M8A2400C14 16GB
Corsair CMK128GX4M8A2400C14 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Ramsta Ramsta-2400Mhz-8G 8GB
Ramsta Ramsta-2400Mhz-8G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramsta Ramsta-2666MHz-4G 4GB
Ramsta Ramsta-2666MHz-4G 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SK Hynix HMA82GR7AFR4N-TF 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Panram International Corporation W4U2666P-8G 8GB
Panram International Corporation W4U2666P-8G 8GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Kingston 9905624-013.A00G 8GB
Kingston 9905624-013.A00G 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
内存RAM