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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905664-010.A00G 4GB
比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Kingston 9905664-010.A00G 4GB
总分
Nanya Technology M2F8G64CB8HC9N-DI 8GB
总分
Kingston 9905664-010.A00G 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
需要考虑的原因
Kingston 9905664-010.A00G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
37
左右 -48% 更低的延时
更快的写入速度,GB/s
9.0
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905664-010.A00G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
25
读取速度,GB/s
13.9
13.9
写入速度,GB/s
8.6
9.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2395
1944
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Kingston 9905664-010.A00G 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R5316G1609U2K 8GB
Kingston 9905622-055.A00G 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905664-010.A00G 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Samsung M4 70T5663CZ3-CE6 2GB
SK Hynix HMA851U6DJR6N-XN 4GB
Samsung M378A1K43EB2-CWE 8GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C18-16GRS 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Samsung M378B5173BH0-CH9 4GB
Mushkin 99[2/7/4]204F 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
ASint Technology SSA302G08-EGN1C 4GB
Samsung M393A1K43BB1-CTD 8GB
报告一个错误
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Bug description
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