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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KF3733C19D4/16GX 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Kingston KF3733C19D4/16GX 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Kingston KF3733C19D4/16GX 16GB

Kingston KF3733C19D4/16GX 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Kingston KF3733C19D4/16GX 16GB 需要考虑的原因
Kingston KF3733C19D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 37
    左右 -16% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KF3733C19D4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 32
  • 读取速度，GB/s
    13.9 left arrow 17.8
  • 写入速度，GB/s
    8.6 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, , CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3399

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Kingston KF3733C19D4/16GX 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2933C14-8GTZRX 8GB
G Skill Intl F4-2933C14-8GTZRX 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMR16GX4M2C3000C16 8GB
Corsair CMR16GX4M2C3000C16 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
内存RAM