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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Micron Technology 9ASF1G72PZ-2G3A1 8GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 48
    左右 23% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 7.4
    测试中的平均数值
Micron Technology 9ASF1G72PZ-2G3A1 8GB 需要考虑的原因
Micron Technology 9ASF1G72PZ-2G3A1 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 48
  • 读取速度，GB/s
    13.9 left arrow 10.2
  • 写入速度，GB/s
    8.6 left arrow 7.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2190

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Netac Technology Co Ltd E40832A 8GB
Netac Technology Co Ltd E40832A 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW32GX4M2C3333C16 16GB
Corsair CMW32GX4M2C3333C16 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Samsung M378A2G43MX3-CTD 16GB
Samsung M378A2G43MX3-CTD 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
内存RAM