Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Samsung M471A2K43CB1-CRC 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 38

左右 3% 更低的延时
更快的读取速度，GB/s

13.9 13.8

测试中的平均数值

Samsung M471A2K43CB1-CRC 16GB

需要考虑的原因
Samsung M471A2K43CB1-CRC 16GB

报告一个错误

更快的写入速度，GB/s

9.1 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M471A2K43CB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 38
读取速度，GB/s

13.9 13.8
写入速度，GB/s

8.6 9.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 2404

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFRA32A.C8FP 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

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Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Corsair CMK8GX4M2B3200C16 4GB

Corsair CMK8GX4M2B3200C16 4GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Apacer Technology AQD-SD4U4GN24-SG 4GB

Apacer Technology AQD-SD4U4GN24-SG 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

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Patriot Memory (PDP Systems) PSD416G26662 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMD16GX4M4B3200C15 4GB

Corsair CMD16GX4M4B3200C15 4GB