Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Teikon TMA81GS6CJR8N-VKSC 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Teikon TMA81GS6CJR8N-VKSC 8GB

需要考虑的原因
Teikon TMA81GS6CJR8N-VKSC 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 37

左右 -9% 更低的延时
更快的读取速度，GB/s

14.1 13.9

测试中的平均数值
更快的写入速度，GB/s

9.9 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 34
读取速度，GB/s

13.9 14.1
写入速度，GB/s

8.6 9.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 2562

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

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Kingston HX318C10FK/4 4GB

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AMD AE34G1601U1 4GB

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Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB