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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Transcend Information JM2666HLB-8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Transcend Information JM2666HLB-8G 8GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Transcend Information JM2666HLB-8G 8GB

Transcend Information JM2666HLB-8G 8GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Transcend Information JM2666HLB-8G 8GB 需要考虑的原因
Transcend Information JM2666HLB-8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 37
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Transcend Information JM2666HLB-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 28
  • 读取速度，GB/s
    13.9 left arrow 16.1
  • 写入速度，GB/s
    8.6 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2920

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Transcend Information JM2666HLB-8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Transcend Information JM2666HLB-8G 8GB
Transcend Information JM2666HLB-8G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK16GX4M2K4000C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Crucial Technology BL16G26C16S4B.16FD 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
内存RAM
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT25664BA1339.M8FK 2GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston 99U5663-001.A00G 16GB
Kingston 99U5663-001.A00G 16GB
内存RAM
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
Corsair CMK64GX4M4K3733C17 16GB
Corsair CMK64GX4M4K3733C17 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Crucial Technology BL16G26C16S4B.16FD 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMR32GX4M4D3000C16 8GB
Corsair CMR32GX4M4D3000C16 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMW32GX4M4D3600C16 8GB
Corsair CMW32GX4M4D3600C16 8GB
内存RAM