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Nanya Technology M2S4G64CB8HB5N-CG 4GB
AMD R744G2400U1S 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB vs AMD R744G2400U1S 4GB

总分
star star star star star
Nanya Technology M2S4G64CB8HB5N-CG 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

总分
star star star star star
AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异 规格 评论

差异

Nanya Technology M2S4G64CB8HB5N-CG 4GB 需要考虑的原因
Nanya Technology M2S4G64CB8HB5N-CG 4GB
报告一个错误
AMD R744G2400U1S 4GB 需要考虑的原因
AMD R744G2400U1S 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 29
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 9.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2S4G64CB8HB5N-CG 4GB
AMD R744G2400U1S 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 22
  • 读取速度，GB/s
    9.9 left arrow 16.7
  • 写入速度，GB/s
    8.1 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1691 left arrow 2862

Nanya Technology M2S4G64CB8HB5N-CG 4GB RAM的比较

Nanya Technology M2S4G64CB8HB5N-CG 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

AMD R744G2400U1S 4GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology M2S4G64CB8HB5N-CG 4GB
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内存RAM
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