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Nanya Technology M2X4G64CB88CHN-DG 4GB
G Skill Intl F4-2800C14-16GTZ 16GB

Nanya Technology M2X4G64CB88CHN-DG 4GB vs G Skill Intl F4-2800C14-16GTZ 16GB

总分
star star star star star
Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

总分
star star star star star
G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB88CHN-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB88CHN-DG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 29% 更低的延时
G Skill Intl F4-2800C14-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-2800C14-16GTZ 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.8 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB88CHN-DG 4GB
G Skill Intl F4-2800C14-16GTZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 38
  • 读取速度，GB/s
    12.8 left arrow 13.8
  • 写入速度，GB/s
    8.0 left arrow 10.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2083 left arrow 2841

Nanya Technology M2X4G64CB88CHN-DG 4GB RAM的比较

Nanya Technology M2X4G64CB88D9N-DG 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB

G Skill Intl F4-2800C14-16GTZ 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Nanya Technology M2X4G64CB88CHN-DG 4GB
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Kingston 9905403-515.A00LF 8GB
Hewlett-Packard 7EH67AA# 8GB
Hewlett-Packard 7EH67AA# 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
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Corsair CMK16GX4M4A2666C16 4GB
内存RAM