Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Corsair CMSX16GX4M2A2666C18 8GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值
更快的写入速度，GB/s

2,077.3 11.3

测试中的平均数值

Corsair CMSX16GX4M2A2666C18 8GB

需要考虑的原因
Corsair CMSX16GX4M2A2666C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 61

左右 -69% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Corsair CMSX16GX4M2A2666C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 36
读取速度，GB/s

3,835.2 15.0
写入速度，GB/s

2,077.3 11.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

606 2653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Samsung M471B5773DH0-CH9 2GB

Corsair CMK16GX4M2G4000C16 8GB

Corsair CMK16GX4M2G4000C16 8GB