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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Corsair CMT32GX4M4C3600C18 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Corsair CMT32GX4M4C3600C18 8GB

总分
star star star star star
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分
star star star star star
Corsair CMT32GX4M4C3600C18 8GB

Corsair CMT32GX4M4C3600C18 8GB

差异 规格 评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB 需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,077.3 left arrow 16.1
    测试中的平均数值
Corsair CMT32GX4M4C3600C18 8GB 需要考虑的原因
Corsair CMT32GX4M4C3600C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 61
    左右 -110% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Corsair CMT32GX4M4C3600C18 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 29
  • 读取速度，GB/s
    3,835.2 left arrow 18.5
  • 写入速度，GB/s
    2,077.3 left arrow 16.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    606 left arrow 3761

Nanya Technology M2Y1G64TU8HB0B-25C 1GB RAM的比较

SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 99U5701-036.A00G 16GB

Corsair CMT32GX4M4C3600C18 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMT16GX4M2K4000C19 8GB
Corsair CMT16GX4M2K4000C19 8GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
G Skill Intl F4-3600C14-16GVK 16GB
G Skill Intl F4-3600C14-16GVK 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Corsair CMW64GX4M4E3200C16 16GB
Corsair CMW64GX4M4E3200C16 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMA82GU7AFR8N-UH 16GB
SK Hynix HMA82GU7AFR8N-UH 16GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Corsair CMT32GX4M4C3600C18 8GB
Corsair CMT32GX4M4C3600C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Essencore Limited KD48GU88C-26N190A 8GB
Essencore Limited KD48GU88C-26N190A 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston X2YH1K-MIE-NX 16GB
Kingston X2YH1K-MIE-NX 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston HP24D4U7S8MBP-8 8GB
Kingston HP24D4U7S8MBP-8 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
内存RAM