Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs G Skill Intl F4-3200C15-8GTZKY 8GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

更快的读取速度，GB/s

3 19.4

测试中的平均数值
更快的写入速度，GB/s

2,077.3 15.5

测试中的平均数值

G Skill Intl F4-3200C15-8GTZKY 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKY 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 61

左右 -144% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-3200C15-8GTZKY 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 25
读取速度，GB/s

3,835.2 19.4
写入速度，GB/s

2,077.3 15.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

606 3673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-3200C16-16GVKA 16GB

G Skill Intl F4-3200C16-16GVKA 16GB

Corsair CMY16GX3M4A2133C8 4GB

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Corsair CMW16GX4M2K4266C19 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingston KF552C40-16 16GB

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Kingston 9905630-031.A00G 16GB

Kingston 9905630-031.A00G 16GB