Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs G Skill Intl F4-4400C19-16GTZR 16GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

更快的读取速度，GB/s

3 20.2

测试中的平均数值
更快的写入速度，GB/s

2,077.3 16.8

测试中的平均数值

G Skill Intl F4-4400C19-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4400C19-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 61

左右 -110% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-4400C19-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 29
读取速度，GB/s

3,835.2 20.2
写入速度，GB/s

2,077.3 16.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

606 3925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99P5474-014.A00LF 4GB

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SK Hynix HMA81GS6CJR8N-VK 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMK64GX4M8B2800C14 8GB

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Kingston 99U5403-050.A00LF 4GB

Kingston 99U5403-050.A00LF 4GB

G Skill Intl F4-2133C15-4GFX 4GB

G Skill Intl F4-2133C15-4GFX 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB