Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Corsair CMK8GX4M2B4266C19 4GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

Corsair CMK8GX4M2B4266C19 4GB

需要考虑的原因
Corsair CMK8GX4M2B4266C19 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 28

左右 -56% 更低的延时
更快的读取速度，GB/s

20.9 11.7

测试中的平均数值
更快的写入速度，GB/s

16.7 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Corsair CMK8GX4M2B4266C19 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 18
读取速度，GB/s

11.7 20.9
写入速度，GB/s

8.4 16.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1578 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Asgard VMA45UG-MEC1U2AW1 8GB

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Samsung M393B2G70BH0-YK0 16GB

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AMD R538G1601U2S 8GB

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Kingston KHX318C10FR/8G 8GB

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Crucial Technology BL16G26C16S4B.16FD 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Kingston 9905665-011.A00G 4GB

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Kingston 99U5474-010.A00LF 2GB

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Crucial Technology CT16G4SFRA266.M16FRS 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Samsung M378B5773DH0-CH9 2GB

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Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB