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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Crucial Technology CT8G3S1339M.M16FED 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Crucial Technology CT8G3S1339M.M16FED 8GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
Crucial Technology CT8G3S1339M.M16FED 8GB

Crucial Technology CT8G3S1339M.M16FED 8GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    11.7 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.3
    测试中的平均数值
Crucial Technology CT8G3S1339M.M16FED 8GB 需要考虑的原因
Crucial Technology CT8G3S1339M.M16FED 8GB
报告一个错误

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Crucial Technology CT8G3S1339M.M16FED 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    11.7 left arrow 10.4
  • 写入速度，GB/s
    8.4 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 1803

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

Crucial Technology CT8G3S1339M.M16FED 8GB RAM的比较

SK Hynix HMT325S6BFR8C-H9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMT64GX4M4Z3600C18 16GB
Corsair CMT64GX4M4Z3600C18 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3200C16-8GFX 8GB
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Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-8GSXKB 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
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G Skill Intl F3-2666C12-8GTXD 8GB
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Apacer Technology 78.CAGN4.4020B 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
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Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
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Ramaxel Technology RMSA3260ME78HAF-2666 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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内存RAM
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Patriot Memory (PDP Systems) 3200 C16 Series 8GB
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A-DATA Technology VDQVE1B16 2GB
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Kingston X2YH1K-MIE-NX 16GB
内存RAM
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Samsung M391B5673EH1-CH9 2GB
Kingston 9965600-033.A00G 16GB
Kingston 9965600-033.A00G 16GB
内存RAM