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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Essencore Limited IM48GU88A30-FGGHMB 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Essencore Limited IM48GU88A30-FGGHMB 8GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
Essencore Limited IM48GU88A30-FGGHMB 8GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
Essencore Limited IM48GU88A30-FGGHMB 8GB 需要考虑的原因
Essencore Limited IM48GU88A30-FGGHMB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 28
    左右 -47% 更低的延时
  • 更快的读取速度，GB/s
    19 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 19
  • 读取速度，GB/s
    11.7 left arrow 19.0
  • 写入速度，GB/s
    8.4 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 3110

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

Essencore Limited IM48GU88A30-FGGHMB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Nanya Technology M2F2G64CB88B7N-CG 2GB
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内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
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Essencore Limited IM48GU88A30-FGGHMB 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0WS 4GB
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内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
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内存RAM
Kingston 99U5403-465.A00LF 8GB
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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
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SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C16-8GTZSW 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
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Corsair CM4X8GC3000C15K4 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
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Kingston MSI21D4S15HAG/8G 8GB
内存RAM
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Elpida EBJ21UE8BDF0-DJ-F 2GB
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G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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A-DATA Technology DDR4 4133 2OZ 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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Corsair CMR32GX4M4C3466C16 8GB
内存RAM