Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Corsair CMT64GX4M4K3600C18 16GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 16.5

测试中的平均数值

Corsair CMT64GX4M4K3600C18 16GB

需要考虑的原因
Corsair CMT64GX4M4K3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 72

左右 -157% 更低的延时
更快的写入速度，GB/s

13.8 1,938.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMT64GX4M4K3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 28
读取速度，GB/s

4,241.0 16.5
写入速度，GB/s

1,938.7 13.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

677 3447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Samsung M393B5170FH0-CK0 4GB

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Super Talent F3200UA8G 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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PUSKILL PJ8TFK1GM8 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingston 9965662-016.A00G 16GB

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G Skill Intl F4-3200C14-8GTZRX 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB