Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Crucial Technology CT16G4DFD8213.M16FB 16GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Crucial Technology CT16G4DFD8213.M16FB 16GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 13.9

测试中的平均数值

Crucial Technology CT16G4DFD8213.M16FB 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.M16FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 72

左右 -132% 更低的延时
更快的写入速度，GB/s

8.0 1,938.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 31
读取速度，GB/s

4,241.0 13.9
写入速度，GB/s

1,938.7 8.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

677 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-4600C18-8GTRS 8GB

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G Skill Intl F4-2800C16-4GRK 4GB

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Kingston KTD3KX-MIB 8GB

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Samsung M471B5273DH0-CK0 4GB

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SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Kingston KHX3000C16D4/16GX 16GB

Kingston KHX3000C16D4/16GX 16GB

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Kingston 9965600-033.A00G 16GB

Kingston 9965600-033.A00G 16GB