Nanya Technology NT2GT64U8HD0BN-AD 2GB vs G Skill Intl F4-2666C19-8GRS 8GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 16.3

测试中的平均数值

G Skill Intl F4-2666C19-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2666C19-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 72

左右 -106% 更低的延时
更快的写入速度，GB/s

12.6 1,938.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-2666C19-8GRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 35
读取速度，GB/s

4,241.0 16.3
写入速度，GB/s

1,938.7 12.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

677 2863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. Team-Elite-1333 4GB

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Corsair CMT32GX4M4C3600C18 8GB

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Corsair CMK16GX4M4B3000C15 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905678-026.A00G 8GB