Nanya Technology NT2GT64U8HD0BN-AD 2GB vs G Skill Intl F4-3200C16-8GVR 8GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

G Skill Intl F4-3200C16-8GVR 8GB

G Skill Intl F4-3200C16-8GVR 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值

G Skill Intl F4-3200C16-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 72

左右 -227% 更低的延时
更快的写入速度，GB/s

13.2 1,938.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-3200C16-8GVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 22
读取速度，GB/s

4,241.0 17.5
写入速度，GB/s

1,938.7 13.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

677 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD32GX4M2C3466C16W 16GB

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AMD R5316G1609U2K 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston KF548C38-16 16GB

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Corsair VS1GB800D2 1GB

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Team Group Inc. UD5-6400 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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