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Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs G Skill Intl F4-3866C18-8GTZKW 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.9
    测试中的平均数值
G Skill Intl F4-3866C18-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 72
    左右 -300% 更低的延时
  • 更快的写入速度，GB/s
    16.7 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 18
  • 读取速度，GB/s
    4,241.0 left arrow 20.9
  • 写入速度，GB/s
    1,938.7 left arrow 16.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3609

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

G Skill Intl F4-3866C18-8GTZKW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB
G Skill Intl F4-3866C18-8GTZKW 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
G Skill Intl F4-3200C14-16GTZR 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMD16GX4M4C3200C15 4GB
Corsair CMD16GX4M4C3200C15 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston 9905701-032.A00G 16GB
Kingston 9905701-032.A00G 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK16GX4M2L3200C16 8GB
Corsair CMK16GX4M2L3200C16 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-8GFX 8GB
G Skill Intl F4-3200C16-8GFX 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965640-016.A00G 32GB
Kingston 9965640-016.A00G 32GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CM4X4GD3000C15K4 4GB
Corsair CM4X4GD3000C15K4 4GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM