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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 72
    左右 -106% 更低的延时
  • 更快的读取速度，GB/s
    9.8 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.9 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 35
  • 读取速度，GB/s
    4,241.0 left arrow 9.8
  • 写入速度，GB/s
    1,938.7 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 2126

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HMAA4GS6AJR8N-XN 32GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Patriot Memory (PDP Systems) 3200 C18 Series 8GB
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Samsung M471B5173DB0-YK0 4GB
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Kingston KVR16N11/8-SP 8GB
内存RAM
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Samsung M393B1K70QB0-CK0 8GB
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Samsung M391A1G43EB1-CRC 8GB
内存RAM
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Samsung M378A1G43DB0-CPB 8GB
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Team Group Inc. TEAMGROUP-UD4-3733 8GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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Heoriady M471A1K43CB1-CTD 8GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
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Samsung M471A1K43EB1-CWE 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
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内存RAM
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A-DATA Technology DDR4 2400 16GB
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Kingston 9905678-012.A00G 8GB
内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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Corsair CM4X4GF2666C16K4 4GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
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Micron Technology 4ATF51264HZ-2G6E1 4GB
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