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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
比较
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Micron Technology 16ATF2G64AZ-2G3H1 16GB
总分
Nanya Technology NT2GT64U8HD0BN-AD 2GB
总分
Micron Technology 16ATF2G64AZ-2G3H1 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
14.4
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3H1 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
72
左右 -157% 更低的延时
更快的写入速度,GB/s
8.6
1,938.7
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
72
28
读取速度,GB/s
4,241.0
14.4
写入速度,GB/s
1,938.7
8.6
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
677
2489
Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R5316G1609U2K 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-2666C18-32GRS 32GB
Kingston 99P5471-002.A00LF 2GB
Samsung M378B5273DH0-CK0 4GB
Samsung M393B1K70CH0-CH9 8GB
Avant Technology W641GU42J7240NB 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Samsung M471B5273DH0-CK0 4GB
Kingston HP26D4S9S1ME-4 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BLS16G4D30AESC.M16FE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
INTENSO GKE800UD102408-2133 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information JM2666HLB-16G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston MSI26D4S9S8ME-8 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
报告一个错误
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Bug description
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