Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Micron Technology 16ATF2G64HZ-2G3E2 16GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 16.5

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3E2 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E2 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 72

左右 -167% 更低的延时
更快的写入速度，GB/s

13.6 1,938.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 27
读取速度，GB/s

4,241.0 16.5
写入速度，GB/s

1,938.7 13.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

677 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Kingston ACR32D4U2S8HD-8X 8GB

Kingston ACR32D4U2S8HD-8X 8GB

V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMK32GX4M4B3600C16 8GB

Corsair CMK32GX4M4B3600C16 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology HMA81GU6AFR8N-UH 8GB

Micron Technology HMA81GU6AFR8N-UH 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Essencore Limited KD48GU880-32A160U 8GB

Essencore Limited KD48GU880-32A160U 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F4-2666C18-8GTZR 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB