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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Ramaxel Technology RMUA5180MH78HBF-2666 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Ramaxel Technology RMUA5180MH78HBF-2666 16GB

Ramaxel Technology RMUA5180MH78HBF-2666 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.6
    测试中的平均数值
Ramaxel Technology RMUA5180MH78HBF-2666 16GB 需要考虑的原因
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 72
    左右 -157% 更低的延时
  • 更快的写入速度，GB/s
    7.3 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 28
  • 读取速度，GB/s
    4,241.0 left arrow 14.6
  • 写入速度，GB/s
    1,938.7 left arrow 7.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    677 left arrow 2296

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Ramaxel Technology RMUA5180MH78HBF-2666 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMW32GX4M2D3600C18 16GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMT32GX4M4C3600C18 8GB
Corsair CMT32GX4M4C3600C18 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Kingston 9905711-038.A00G 8GB
Kingston 9905711-038.A00G 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMT64GX4M4C3466C16 16GB
Corsair CMT64GX4M4C3466C16 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM