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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M393A4K40CB1-CRC 32GB
比较
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Samsung M393A4K40CB1-CRC 32GB
总分
Nanya Technology NT2GT64U8HD0BN-AD 2GB
总分
Samsung M393A4K40CB1-CRC 32GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
10.9
测试中的平均数值
需要考虑的原因
Samsung M393A4K40CB1-CRC 32GB
报告一个错误
低于PassMark测试中的延时,ns
48
72
左右 -50% 更低的延时
更快的写入速度,GB/s
8.1
1,938.7
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M393A4K40CB1-CRC 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
72
48
读取速度,GB/s
4,241.0
10.9
写入速度,GB/s
1,938.7
8.1
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
677
2496
Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB
Samsung M393A4K40CB1-CRC 32GB RAM的比较
Kingston 9905471-002.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2953EZ3-CE6 1GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M393A4K40CB1-CRC 32GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905711-035.A00G 8GB
Corsair CMK32GX5M2B5600C36 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung V-GeN D4S8GL30A8TX5 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2400C16-16GRS 16GB
SpecTek Incorporated PSD34G13332 4GB
Transcend Information JM3200HLE-32G 32GB
Corsair CMZ16GX3M2A1866C9 8GB
Avexir Technologies Corporation T-20181206 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-2400C15-8GNT 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C16-16GTRS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTRG 8GB
报告一个错误
×
Bug description
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