Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Asgard VMA41UH-MEC1U2AW1 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Asgard VMA41UH-MEC1U2AW1 16GB

Asgard VMA41UH-MEC1U2AW1 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Asgard VMA41UH-MEC1U2AW1 16GB

需要考虑的原因
Asgard VMA41UH-MEC1U2AW1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 64

左右 -129% 更低的延时
更快的写入速度，GB/s

6.8 2,256.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Asgard VMA41UH-MEC1U2AW1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 28
读取速度，GB/s

4,651.3 13.7
写入速度，GB/s

2,256.8 6.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMD8GX3M2A2666C12 4GB

Corsair CMD8GX3M2A2666C12 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3200C14-8GTZKY 8GB

G Skill Intl F4-3200C14-8GTZKY 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Golden Empire CL16-20-20 D4-3200 16GB

Golden Empire CL16-20-20 D4-3200 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

Kingston 9905474-019.A00LF 2GB

Kingston 9905474-019.A00LF 2GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB