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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 12.0
    测试中的平均数值
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 64
    左右 -156% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 25
  • 读取速度，GB/s
    4,651.3 left arrow 15.9
  • 写入速度，GB/s
    2,256.8 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3023

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB RAM的比较

Corsair CMSO4GX3M1C1600C11 4GB
Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CB4GU2400.M8E 4GB
Crucial Technology CB4GU2400.M8E 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMW16GX4M2C3200C14 8GB
Corsair CMW16GX4M2C3200C14 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMK32GX4M1A2666C16 32GB
Corsair CMK32GX4M1A2666C16 32GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Kingston 9905734-073.A00G 16GB
Kingston 9905734-073.A00G 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3200C16-8GTZ 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3300C16-16GTZKW 16GB
G Skill Intl F4-3300C16-16GTZKW 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CM4X8GF2666Z16K4 8GB
Corsair CM4X8GF2666Z16K4 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMSX16GX4M2A2400C16 8GB
Corsair CMSX16GX4M2A2400C16 8GB
内存RAM