Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Crucial Technology BLS16G4D26BFSE.16FBD 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 16.3

测试中的平均数值
更快的写入速度，GB/s

2,256.8 12.5

测试中的平均数值

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSE.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 64

左右 -121% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 29
读取速度，GB/s

4,651.3 16.3
写入速度，GB/s

2,256.8 12.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

837 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9905702-184.A00G 8GB

Kingston 9905702-184.A00G 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Kingston HP536727-H41-ELD 4GB

Kingston HP536727-H41-ELD 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F4-3466C16-8GVR 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Corsair CMU64GX4M4C3000C15 16GB

Corsair CMU64GX4M4C3000C15 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB