Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Crucial Technology BLS8G4D30AESEK.M8FE 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 18.6

测试中的平均数值
更快的写入速度，GB/s

2,256.8 15.1

测试中的平均数值

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D30AESEK.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 64

左右 -137% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 27
读取速度，GB/s

4,651.3 18.6
写入速度，GB/s

2,256.8 15.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 3561

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-3600C18-32GTRG 32GB

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB