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Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3333C16-16GVR 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-3333C16-16GVR 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
G Skill Intl F4-3333C16-16GVR 16GB

G Skill Intl F4-3333C16-16GVR 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 13.4
    测试中的平均数值
G Skill Intl F4-3333C16-16GVR 16GB 需要考虑的原因
G Skill Intl F4-3333C16-16GVR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 64
    左右 -156% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3333C16-16GVR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 25
  • 读取速度，GB/s
    4,651.3 left arrow 15.7
  • 写入速度，GB/s
    2,256.8 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3077

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

G Skill Intl F4-3333C16-16GVR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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Kingston 9905403-447.A00LF 4GB
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Corsair CMK32GX4M4C3333C16 8GB
内存RAM
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G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
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Samsung M471B5173DB0-YK0 4GB
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Samsung M393A1G43EB1-CRC 8GB
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