Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Golden Empire CL16-18-18 D4-2666 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 17.4

测试中的平均数值
更快的写入速度，GB/s

2,256.8 13.6

测试中的平均数值

Golden Empire CL16-18-18 D4-2666 8GB

需要考虑的原因
Golden Empire CL16-18-18 D4-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 64

左右 -167% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Golden Empire CL16-18-18 D4-2666 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 24
读取速度，GB/s

4,651.3 17.4
写入速度，GB/s

2,256.8 13.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 3049

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-4133C19-8GTZKW 8GB

G Skill Intl F4-4133C19-8GTZKW 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Essencore Limited KD44GU480-26N160T 4GB

Essencore Limited KD44GU480-26N160T 4GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3200C16-8GTZRN 8GB

G Skill Intl F4-3200C16-8GTZRN 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston CBD26D4U9D8ME-16 16GB

Kingston CBD26D4U9D8ME-16 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3200C16-8GSXFB 8GB

G Skill Intl F4-3200C16-8GSXFB 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB