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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Golden Empire CL18-22-22 D4-3600 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Golden Empire CL18-22-22 D4-3600 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 14.7
    测试中的平均数值
Golden Empire CL18-22-22 D4-3600 16GB 需要考虑的原因
Golden Empire CL18-22-22 D4-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 64
    左右 -113% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Golden Empire CL18-22-22 D4-3600 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 30
  • 读取速度，GB/s
    4,651.3 left arrow 18.2
  • 写入速度，GB/s
    2,256.8 left arrow 14.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3533

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Golden Empire CL18-22-22 D4-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston CAC24D4S7D8MB-16 16GB
Kingston CAC24D4S7D8MB-16 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Corsair CMH32GX4M2Z3600C18 16GB
Corsair CMH32GX4M2Z3600C18 16GB
内存RAM
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4B3333C16 8GB
Corsair CMK32GX4M4B3333C16 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
内存RAM