Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Kingston KM0VW4-MID 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Kingston KM0VW4-MID 8GB

Kingston KM0VW4-MID 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值
更快的写入速度，GB/s

2,256.8 10.6

测试中的平均数值

Kingston KM0VW4-MID 8GB

需要考虑的原因
Kingston KM0VW4-MID 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 64

左右 -68% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston KM0VW4-MID 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 38
读取速度，GB/s

4,651.3 14.7
写入速度，GB/s

2,256.8 10.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 2493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Corsair CMX8GX3M2A1600C11 4GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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G Skill Intl F4-3300C16-8GTZ 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Ramaxel Technology RMSA3320ME88HBF-3200 16GB