Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Kingston KVR24N17S8/4 4GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 15.4

测试中的平均数值

Kingston KVR24N17S8/4 4GB

需要考虑的原因
Kingston KVR24N17S8/4 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 64

左右 -205% 更低的延时
更快的写入速度，GB/s

7.1 2,256.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston KVR24N17S8/4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 21
读取速度，GB/s

4,651.3 15.4
写入速度，GB/s

2,256.8 7.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GE2933C19S2 16MB

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Corsair CMK64GX4M4C3000C16 16GB

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Crucial Technology CT25664AA800.M16FG 2GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology CT8G4SFS8213.M8FB 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB

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Asgard VMA45UH-MEC1U2AW2 16GB

Asgard VMA45UH-MEC1U2AW2 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Ramaxel Technology RMUA5180MH78HBF-2666 16GB

Ramaxel Technology RMUA5180MH78HBF-2666 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB