Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 18ASF2G72PZ-2G3B1 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 10.2

测试中的平均数值

Micron Technology 18ASF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

50 64

左右 -28% 更低的延时
更快的写入速度，GB/s

7.3 2,256.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 50
读取速度，GB/s

4,651.3 10.2
写入速度，GB/s

2,256.8 7.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 2248

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Essencore Limited KD4AGU88C-26N190A 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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G Skill Intl F4-3000C15-8GTZ 8GB

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Kingston KVR533D2N4 512MB

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Kingston KF3600C16D4/16GX 16GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston 9905744-005.A00G 16GB

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Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Samsung M393A1G40EB1-CRC 8GB

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Crucial Technology CT102464BF160B.C16 8GB

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Kingston 9965669-008.A03G 16GB

Kingston 9965669-008.A03G 16GB