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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M471A1K43BB1-CRC 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung M471A1K43BB1-CRC 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.3
    测试中的平均数值
Samsung M471A1K43BB1-CRC 8GB 需要考虑的原因
Samsung M471A1K43BB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 64
    左右 -73% 更低的延时
  • 更快的写入速度，GB/s
    9.9 left arrow 2,256.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M471A1K43BB1-CRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 37
  • 读取速度，GB/s
    4,651.3 left arrow 14.3
  • 写入速度，GB/s
    2,256.8 left arrow 9.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    837 left arrow 2422

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Samsung M471A1K43BB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Corsair VS2GSDS800D2 2GB
Corsair VS2GSDS800D2 2GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston HX432C15PB3/16 16GB
Kingston HX432C15PB3/16 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
V-Color Technology Inc. TN416G26D819-SB 16GB
V-Color Technology Inc. TN416G26D819-SB 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMW32GX4M2D3600C18 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3000C16-16GVRB 16GB
G Skill Intl F4-3000C16-16GVRB 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Maxsun MSD48G30M3 8GB
Maxsun MSD48G30M3 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 9905734-003.A00G 32GB
Kingston 9905734-003.A00G 32GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-3000C16-8GTRG 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
内存RAM