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Nanya Technology NT2GT64U8HD0BY-AD 2GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs V-Color Technology Inc. TL48G32S8KSRGB16 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
V-Color Technology Inc. TL48G32S8KSRGB16 8GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 14.5
    测试中的平均数值
V-Color Technology Inc. TL48G32S8KSRGB16 8GB 需要考虑的原因
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 64
    左右 -205% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 21
  • 读取速度，GB/s
    4,651.3 left arrow 19.2
  • 写入速度，GB/s
    2,256.8 left arrow 14.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3350

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Mushkin MRA4S320GJJM16G 16GB
Mushkin MRA4S320GJJM16G 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Apacer Technology GD2.1542WS.001 8GB
Apacer Technology GD2.1542WS.001 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-4GNT 4GB
G Skill Intl F4-2400C15-4GNT 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Corsair CMV4GX3M1C1600C11 4GB
Corsair CMV4GX3M1C1600C11 4GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
内存RAM