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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Asgard VMA44UI-MEC1U2AW2 32GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Asgard VMA44UI-MEC1U2AW2 32GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 66
    左右 36% 更低的延时
Asgard VMA44UI-MEC1U2AW2 32GB 需要考虑的原因
Asgard VMA44UI-MEC1U2AW2 32GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Asgard VMA44UI-MEC1U2AW2 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 66
  • 读取速度，GB/s
    9.7 left arrow 15.3
  • 写入速度，GB/s
    6.0 left arrow 9.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2122

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Asgard VMA44UI-MEC1U2AW2 32GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Asgard VMA44UI-MEC1U2AW2 32GB
Asgard VMA44UI-MEC1U2AW2 32GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMK32GX4M4B3466C16 8GB
Corsair CMK32GX4M4B3466C16 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
SK Hynix HMA451U6MFR8N-TF 4GB
SK Hynix HMA451U6MFR8N-TF 4GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston 9965662-010.A00G 16GB
Kingston 9965662-010.A00G 16GB
内存RAM
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F3-1600C11-4GIS 4GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMV8GX4M1A2133C15 8GB
Corsair CMV8GX4M1A2133C15 8GB
内存RAM