Nanya Technology NT4GC64B8HG0NS-CG 4GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Chun Well Technology Holding Limited MD4U0836165BCW 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U0836165BCW 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 42

左右 -35% 更低的延时
更快的读取速度，GB/s

21.4 9.7

测试中的平均数值
更快的写入速度，GB/s

16.2 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 31
读取速度，GB/s

9.7 21.4
写入速度，GB/s

6.0 16.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 3809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited MD4U0836165BCW 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology CT8G4SFD824A.C16FF 8GB

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Apacer Technology 78.B1GET.AU00C 4GB

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G Skill Intl F4-3600C18-32GTZN 32GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Corsair CMK128GX4M8X3800C19 16GB

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Crucial Technology CT8G4DFS824A.C8FBR1 8GB

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Samsung M3 78T6553EZS-CF7 512MB

Samsung M3 78T6553EZS-CF7 512MB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Apacer Technology 78.D2GF2.4010B 16GB

Apacer Technology 78.D2GF2.4010B 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

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Samsung M471B1G73BH0-YK0 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB