Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CMSX32GX4M2A3000C16 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Corsair CMSX32GX4M2A3000C16 16GB

需要考虑的原因
Corsair CMSX32GX4M2A3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 42

左右 -35% 更低的延时
更快的读取速度，GB/s

17.3 9.7

测试中的平均数值
更快的写入速度，GB/s

13.9 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMSX32GX4M2A3000C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 31
读取速度，GB/s

9.7 17.3
写入速度，GB/s

6.0 13.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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Kingston KF556C40-16 16GB

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Micron Technology 36ASF4G72LZ-2G3A1 32GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Apacer Technology 78.CAGP7.C7C0B 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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SK Hynix HMA81GU6CJR8N-UH 8GB

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Samsung M471A1K43CB1-CTD 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

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Kingston 9905702-082.A00G 8GB

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Kingston ACR256X64D3S1333C9 2GB

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