Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CMT16GX4M2Z3200C16 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Corsair CMT16GX4M2Z3200C16 8GB

Corsair CMT16GX4M2Z3200C16 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Corsair CMT16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMT16GX4M2Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 -45% 更低的延时
更快的读取速度，GB/s

17.3 9.7

测试中的平均数值
更快的写入速度，GB/s

14.5 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMT16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 29
读取速度，GB/s

9.7 17.3
写入速度，GB/s

6.0 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 3395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4133C19-8GTZR 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Corsair CM3X8GA2400C11Y2R 8GB

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Kingston KHX3000C16D4/32GX 32GB

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Kingston 99U5584-010.A00LF 4GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

Kingston KF2933C17S4/32G 32GB

Kingston KF2933C17S4/32G 32GB