Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

需要考虑的原因
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 42

左右 -83% 更低的延时
更快的读取速度，GB/s

21.3 9.7

测试中的平均数值
更快的写入速度，GB/s

16.9 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 23
读取速度，GB/s

9.7 21.3
写入速度，GB/s

6.0 16.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 4151

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905678-121.A00G 8GB

Kingston 9905678-121.A00G 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

INTENSO 5641160 8GB

INTENSO 5641160 8GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3733C17-8GTZKW 8GB

G Skill Intl F4-3733C17-8GTZKW 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Ramaxel Technology RMUA5180ME78HBF-2666 16GB

Ramaxel Technology RMUA5180ME78HBF-2666 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Apacer Technology GD2.111881.002 4GB

Apacer Technology GD2.111881.002 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Kingston 9965669-017.A00G 16GB

Kingston 9965669-017.A00G 16GB