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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 43
    左右 2% 更低的延时
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB 需要考虑的原因
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 43
  • 读取速度，GB/s
    9.7 left arrow 16.7
  • 写入速度，GB/s
    6.0 left arrow 10.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2430

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3200C15-16GVK 16GB
G Skill Intl F4-3200C15-16GVK 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Samsung M391A1K43BB1-CRC 8GB
Samsung M391A1K43BB1-CRC 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston HP24D4R7D4MAM-32 32GB
Kingston HP24D4R7D4MAM-32 32GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
Corsair CM3X4GSD1066 4GB
Corsair CM3X4GSD1066 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston 9905700-024.A00G 8GB
Kingston 9905700-024.A00G 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
内存RAM