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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CB16GS2666.C8ET 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CB16GS2666.C8ET 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Crucial Technology CB16GS2666.C8ET 16GB

Crucial Technology CB16GS2666.C8ET 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Crucial Technology CB16GS2666.C8ET 16GB 需要考虑的原因
Crucial Technology CB16GS2666.C8ET 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 42
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CB16GS2666.C8ET 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 32
  • 读取速度，GB/s
    9.7 left arrow 15.0
  • 写入速度，GB/s
    6.0 left arrow 10.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2895

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Crucial Technology CB16GS2666.C8ET 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Ramaxel Technology RMT3010EC58E8F1333 2GB
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Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Apacer Technology 78.CAGNT.4050B 8GB
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Kingston 99U5584-005.A00LF 4GB
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内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3733C17-8GTZKK 8GB
G Skill Intl F4-3733C17-8GTZKK 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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G Skill Intl F4-2933C16-16GFX 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3200C16-16GSXFB 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
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SK Hynix HMA42GR7AFR4N-UH 16GB
内存RAM
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Corsair CMSX4GX3M1A1600C9 4GB
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G Skill Intl F4-3200C16-8GVR 8GB
内存RAM
Lenovo LMKU8G68AHFHD-32A 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
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Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
内存RAM