RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CT16G4DFD832A.M16FR 16GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
Crucial Technology CT16G4DFD832A.M16FR 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4DFD832A.M16FR 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
42
左右 -27% 更低的延时
更快的读取速度,GB/s
18.7
9.7
测试中的平均数值
更快的写入速度,GB/s
12.2
6.0
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
33
读取速度,GB/s
9.7
18.7
写入速度,GB/s
6.0
12.2
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1396
3153
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Crucial Technology CT16G4DFD832A.M16FR 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2400C11-8GSR 8GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
SK Hynix HYMP512U64CP8-Y5 1GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4400C19-8GTZKK 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Kingston KVR800D2N6/2G 2GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M391A1G43DB0-CPB 8GB
Kingston 9905403-090.A01LF 4GB
Corsair CMD8GX4M2B3600C18 4GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Samsung M378B5773CH0-CH9 2GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2800C15-8GRBB 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
报告一个错误
×
Bug description
Source link