Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CT8G4DFRA266.C8FJ 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Crucial Technology CT8G4DFRA266.C8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 42

左右 -11% 更低的延时
更快的读取速度，GB/s

14.6 9.7

测试中的平均数值
更快的写入速度，GB/s

12.2 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 38
读取速度，GB/s

9.7 14.6
写入速度，GB/s

6.0 12.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 2915

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK128GX4M8A2400C14 16GB

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Corsair CMD16GX3M2A1866C9 8GB

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G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

SK Hynix HMA82GR7AFR4N-TF 16GB

SK Hynix HMA82GR7AFR4N-TF 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston HP24D4U7S8MD-8 8GB

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