Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CT8G4SFS824A.M8FD 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Crucial Technology CT8G4SFS824A.M8FD 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 42

左右 -17% 更低的延时
更快的读取速度，GB/s

14.9 9.7

测试中的平均数值
更快的写入速度，GB/s

9.8 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 36
读取速度，GB/s

9.7 14.9
写入速度，GB/s

6.0 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 2415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393A2K43BB1-CPB 16GB

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Crucial Technology CT16G48C40U5.M8A1 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600

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Crucial Technology CT51264BD1339.M16F 4GB

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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB