Nanya Technology NT4GC64B8HG0NS-CG 4GB vs EXCELERAM D48G8G8H8SS9CJRB22 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

EXCELERAM D48G8G8H8SS9CJRB22 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 65

左右 35% 更低的延时

EXCELERAM D48G8G8H8SS9CJRB22 8GB

需要考虑的原因
EXCELERAM D48G8G8H8SS9CJRB22 8GB

报告一个错误

更快的读取速度，GB/s

17 9.7

测试中的平均数值
更快的写入速度，GB/s

9.5 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 65
读取速度，GB/s

9.7 17.0
写入速度，GB/s

6.0 9.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 2058

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA851U6DJR6N-WM 4GB

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Samsung M378A2K43CB1-CRC 16GB

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Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Essencore Limited IM48GU88N24-FFFHA0 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Transcend Information AQD-SD4U8GE21-SG 8GB

Transcend Information AQD-SD4U8GE21-SG 8GB

Crucial Technology CT102464BA1339.M16 8GB

Crucial Technology CT102464BA1339.M16 8GB

Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

SK Hynix HMA41GR7AFR4N-UH 8GB

SK Hynix HMA41GR7AFR4N-UH 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston ACR24D4S7D8MB-16 16GB

Kingston ACR24D4S7D8MB-16 16GB